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Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.
Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...