Joseph Bernstein shares his groundbreaking research on using GaN gate drivers to drive SiC transistors at megahertz frequencies.

The evolution of batteries reflects technological progress and the ever-increasing demands of modern society.

TRIACs, devices derived from SCRs, offer advanced functionalities and greater versatility in both DC and AC applications.

HelenAnn Brown, technical marketing manager at Apex Micro Technology, discussed the company’s use of wide-bandgap materials like silicon carbide and gallium nitride to drive performance and ...

At PCIM in Nuremberg, Germany, I sat down with Gerald Deboy, fellow at Infineon Technologies, to discuss the evolving power needs of next-generation AI data centers. As AI drives exponential increases ...

AI is reshaping data center design, with skyrocketing power demands pushing the industry toward more efficient architectures.

WBG semiconductors such as SiC and GaN have an innate ability to handle more power with high device efficiencies than silicon counterparts.

APEC 2025 boasted six main program pillars: plenary sessions, technical and industry sessions, an exposition with more than 300 exhibitors, professional education seminars, and a debate session.

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments.

SiC MOSFETs in a high-power LLC DC/DC converter stage enable a 30% space savings while achieving stable operation and high efficiency.

EUV lithography systems play a vital role in semiconductor manufacturing, facilitating the creation of smaller, more powerful, and energy-efficient chips.

Diodes Incorporated ZXGD3103 is a gate driver IC that is redefining rectification by enabling the use of MOSFETs in place of traditional Schottky diodes.